Product Summary

The BSS84LT1G is a 130 mA, 50 V power MOSFET. The miniature surface mount MOSFET BSS84LT1G reduces power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications of the BSS84LT1G are DC.DC converter, load switching, power management in portable and battery.powered products such as computers, printers, cellular and cordless telephones.

Parametrics

BSS84LT1G absolute maximum ratings: (1)Drain.to.Source Voltage VDSS: 50 Vdc; (2)Gate.to.Source Voltage . Continuous VGS: ± 20 Vdc; (3)Drain Current. Continuous @ TA = 25℃ ID: 130mA; (4)Pulsed Drain Current IDM: 520mA; (5)Total Power Dissipation @ TA = 25℃ PD: 225 mW; (6)Operating and Storage Temperature Range TJ, Tstg: -55 to 150℃; (7)Thermal Resistance . Junction.to.Ambient RθJA: 556 ℃/W; (8)Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL: 260 ℃.

Features

BSS84LT1G features: (1)Energy Efficient; (2)Miniature SOT-23 Surface Mount Package Saves Board Space; (3)Pb-Free Package is Available.

Diagrams

BSS84LT1G soldering footprint

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS84LT1G
BSS84LT1G
ON Semiconductor
MOSFET 50V 130mA P-Channel
Data Sheet
0-1: $0.25
1-25: $0.14
25-100: $0.10
100-500: $0.06
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS80
BSS80
Other

Data Sheet
Negotiable 
BSS806N H6327
BSS806N H6327

MOSFET N-CH 20V 2.3A SOT23
Data Sheet
0-1: $0.37
1-10: $0.27
10-25: $0.21
25-100: $0.16
100-250: $0.11
250-500: $0.09
500-1000: $0.07
BSS806N L6327
BSS806N L6327
Infineon Technologies
MOSFET N-Channel 20V MOSFET
Data Sheet
Negotiable 
BSS806NH6327XT
BSS806NH6327XT
Infineon Technologies
MOSFET OptiMOS 2 Small Signal Transistor
Data Sheet
0-1: $0.24
1-10: $0.19
10-100: $0.13
100-500: $0.09
BSS80BTA
BSS80BTA
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable 
BSS80BTC
BSS80BTC
Diodes Inc. / Zetex
Transistors Bipolar (BJT) -
Data Sheet
Negotiable