Product Summary

The CY7C1049B-15VC is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable, an active LOW Output Enable, and three-state drivers. Writing to the CY7C1049B-15VC is accomplished by taking Chip Enable and Write Enable inputs LOW.

Parametrics

CY7C1049B-15VC absolute maximum ratings: (1)Storage Temperature: –65 to +150℃; (2)Ambient Temperature with Power Applied: –55 to +125℃; (3)Supply Voltage on VCC to Relative GND[2]:–0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State[2]: –0.5V to VCC + 0.5V; (5)DC Input Voltage[2]:–0.5V to V + 0.5V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015); (8)Latch-Up Current: >200 mA.

Features

CY7C1049B-15VC features: (1)High speed: tAA = 12 ns ; (2)Low active power: 1320 mW (max.); (3)Low CMOS standby power (Commercial L version): 2.75 mW (max.); (4)2.0V Data Retention (400 μW at 2.0V retention); (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE and OE features.

Diagrams

CY7C1049B-15VC logic block diagram

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