(China (Mainland))
Product Summary
The HM628100LTTI5 is an 8-Mbit static RAM organized 1,048,576-word × 8-bit. It has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628100LTTI5 offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The HM628100LTTI5 is packaged in standard 44-pin TSOP II for high density surface mounting.
Parametrics
HM628100LTTI5 absolute maximum ratings: (1)Power supply voltage relative to VSS, VCC: –0.5 to + 7.0 V; (2)Terminal voltage on any pin relative to VSS, VT: –0.5 to VCC + 0.3V; (3)Power dissipation, PT: 1.0 W; (4)Storage temperature range, Tstg: –55 to +125℃; (5)Storage temperature range under bias, Tbias: –40 to +85℃.
Features
HM628100LTTI5 features: (1)Single 5.0 V supply: 5.0 V ± 10 %; (2)Fast access time: 55 ns (max); (3)Power dissipation: Active: 10 mW/MHz (typ); Standby: 7.5 μW (typ); (4)Completely static memory; (5)No clock or timing strobe required; (6)Equal access and cycle times; (7)Common data input and output; (8)Three state output; (9)Battery backup operation; (10)2 chip selection for battery backup; (11)Temperature range: –40 to +85℃.
Diagrams
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