Product Summary

The MMBF170 is a N-channel enhancement mode field effect transistor. Its package is SOT-23.

Parametrics

MMBF170 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 60 V; (2)Drain-Gate Voltage RGS ≤1.0MΩ, VDGR: 60 V; (3)Gate-Source Voltage, VGSS: ±20V Continuous; ±40 V Pulsed; (4)Drain Current, ID: 500mA Continuous; 800 mA Pulsed; (5)Total Power Dissipation, Pd: 300mW; 1.80 mW/℃; (6)Thermal Resistance, Junction to Ambient, RθJA: 417 K/W; (7)Operating and Storage Temperature Range Tj, TSTG: -55 to +150 ℃.

Features

MMBF170 features: (1)Low On-Resistance; (2)Low Gate Threshold Voltage; (3)Low Input Capacitance; (4)Fast Switching Speed; (5)Low Input/Output Leakage.

Diagrams

MMBF170 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MMBF170
MMBF170
Fairchild Semiconductor
MOSFET N-Ch Enhance
Data Sheet
0-1: $0.22
1-25: $0.17
25-100: $0.13
100-250: $0.08
MMBF170_D87Z
MMBF170_D87Z
Fairchild Semiconductor
MOSFET
Data Sheet
Negotiable 
MMBF170_Q
MMBF170_Q
Fairchild Semiconductor
MOSFET N-Ch Enhance
Data Sheet
Negotiable 
MMBF170-7
MMBF170-7
Diodes Inc.
MOSFET 60V 225mW
Data Sheet
Negotiable 
MMBF170-7-F
MMBF170-7-F
Diodes Inc.
MOSFET 60V 225mW
Data Sheet
0-1: $0.25
1-10: $0.18
10-100: $0.11
100-250: $0.08
MMBF170LT1
MMBF170LT1
ON Semiconductor
MOSFET 20V 500mA N-Channel
Data Sheet
Negotiable 
MMBF170LT1_1246623
MMBF170LT1_1246623
Other

Data Sheet
Negotiable 
MMBF170LT1G
MMBF170LT1G
ON Semiconductor
MOSFET 60V 500mA N-Channel
Data Sheet
0-1: $0.17
1-25: $0.13
25-100: $0.07
100-500: $0.05